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| Ordering number : ENN8249 MCH6622 N-Channel Silicon MOSFET MCH6622 Features * * * * General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions Ratings 60 20 1 4 0.8 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.5A ID=0.5A, VGS=10V ID=0.3A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 60 1 10 1.2 0.45 0.9 480 640 70 9 6.5 630 900 2.6 typ max Unit V A A V S m m pF pF pF Marking : FW Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005PE TS IM TA-4278 No.8249-1/4 MCH6622 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=1A VDS=30V, VGS=10V, ID=1A VDS=30V, VGS=10V, ID=1A IS=1A, VGS=0 Ratings min typ 5 4 12 12 3.0 0.6 0.6 0.9 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2173A 0.25 Electrical Connection 6 5 4 0.3 4 5 6 0.15 2.1 1.6 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 1 0.25 32 0.65 2.0 0.07 1 2 3 6 5 4 0.85 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6 1 2 3 Switching Time Test Circuit VIN 10V 0V VIN ID=500mA RL=60 VDD=30V D PW=10s D.C.1% VOUT G P.G 50 S MCH6622 1.0 ID -- VDS 6.0V 5.0 V4 .0V 2.0 1.8 1.6 ID -- VGS 25 C Ta= -5C 75 Ta= 2 1.5 2.0 2.5 3.0 Drain Current, ID -- A Drain Current, ID -- A 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.6 10.0 V VGS=3.0V 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.5 1.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V IT05973 Gate-to-Source Voltage, VGS -- V --25 C C 75 C IT05974 0.8 8.0V No.8249-2/4 25 3.5 C V VDS=10V MCH6622 1200 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C ID=0.5A 1200 1100 1000 900 800 700 600 500 400 300 200 100 --60 --40 --20 0 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 1100 1000 900 800 700 600 500 400 300 0 2 4 6 8 10 12 14 16 =0 ID .3A , VG 4 S= V V 0. I D= 5A 10 S= , VG 18 20 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT05975 10 7 5 3 2 1.0 7 5 Ambient Temperature, Ta -- C IT09313 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS=10V 3 1.0 7 5 3 2 C 25 0.1 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.2 0.4 0.6 Ta= 7 = Ta C 75 3 2 5C 25 C --25 C 0.8 5 --2 C Forward Current, IF -- A 2 1.0 1.2 IT05978 Drain Current, ID -- A 100 7 IT05977 100 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=30V VGS=10V Ciss, Coss, Crss -- pF 3 2 td(off) 10 7 5 3 2 Coss 10 7 5 3 2 tf td(on) tr Crss 1.0 0.1 1.0 2 3 5 7 f=1MHz 0 5 10 15 20 25 30 IT05980 Drain Current, ID -- A 10 1.0 IT09314 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=1A 8 IDP=4A <10s 10 0 s 1m 10 ms Drain Current, ID -- A 6 1.0 7 5 3 2 0.1 7 5 3 2 ID=1A s DC Operation in this area is limited by RDS(on). 10 op 0m 4 er s ati on 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT05981 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm)1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT09315 No.8249-3/4 MCH6622 1.0 PD -- Ta Allowable Power Dissipation, PD -- W 0.8 M ou nt ed on 0.6 ac er am ic bo ar 0.4 d( 90 0m m2 !0 0.2 .8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT09316 Note on usage : Since the MCH6622 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8249-4/4 |
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